+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2">
+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2">
+ 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2">
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders Must have Hydraulic Pellet Press – surdyk.pl
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Home»»InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders Must have Hydraulic Pellet Press
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders Must have Hydraulic Pellet Press
Must have Hydraulic Pellet Press equipped with the Protection Cover
82 gr/cm 3 Particle Size
Polishing: two sides polished
with Pattern
6" Dia x 0
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US Dispensers & Feeders Must have Hydraulic Pellet Press2" InSb wafer (P type, Ge doped ) Size: 2" dia x 0. 45mm thick Orientation: <100> + 0. 5 o Polishing: one side polishd Packing: Sealed in nitrogen in single wafer container at 1000 class clean room Properties Growth method LEC Orientation (100) + 0. 5 o Orientation Flat N A Doping Ge Conductivity type P Type Carrier Concentration (0. 5 5. 0) x10^17 cc @77K Mobility > (4. 0 8. 4)x10^3 cm2 Vs EPD <200 cm 2
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